Vibrational lifetimes of hydrogen in silicon: Isotope effects and MOSFET reliability

Gunter Lüpke, Baozhou Sun, Norman H. Tolk, Leonard C. Feldman

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Characterization of defect and impurity reactions, dissociation and migration in semiconductors requires detailed understanding of rates and pathways of vibrational energy flow, of energy transfer channels and of coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. We describe recent experiments which measure the vibrational lifetime of the Si-H bond in various defect configurations and show the relationship between these lifetimes and silicon MOSFET reliability.

Original languageEnglish
Pages (from-to)33-41
Number of pages9
JournalMaterials Research Society Symposium Proceedings
StatePublished - Jan 1 2004
EventHydrogen in Semiconductors - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004


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