TY - JOUR
T1 - Vibrational lifetimes of hydrogen in silicon
T2 - Hydrogen in Semiconductors
AU - Lüpke, Gunter
AU - Sun, Baozhou
AU - Tolk, Norman H.
AU - Feldman, Leonard C.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - Characterization of defect and impurity reactions, dissociation and migration in semiconductors requires detailed understanding of rates and pathways of vibrational energy flow, of energy transfer channels and of coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. We describe recent experiments which measure the vibrational lifetime of the Si-H bond in various defect configurations and show the relationship between these lifetimes and silicon MOSFET reliability.
AB - Characterization of defect and impurity reactions, dissociation and migration in semiconductors requires detailed understanding of rates and pathways of vibrational energy flow, of energy transfer channels and of coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. We describe recent experiments which measure the vibrational lifetime of the Si-H bond in various defect configurations and show the relationship between these lifetimes and silicon MOSFET reliability.
UR - http://www.scopus.com/inward/record.url?scp=12844277250&partnerID=8YFLogxK
U2 - 10.1557/proc-813-h7.1
DO - 10.1557/proc-813-h7.1
M3 - Conference article
AN - SCOPUS:12844277250
SN - 0272-9172
VL - 813
SP - 33
EP - 41
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
Y2 - 13 April 2004 through 15 April 2004
ER -