TY - JOUR
T1 - Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors
AU - Sun, B.
AU - Shi, G. A.
AU - Nageswara Rao, S. V.S.
AU - Stavola, M.
AU - Tolk, N. H.
AU - Dixit, S. K.
AU - Feldman, L. C.
AU - Lüpke, G.
PY - 2006/1/27
Y1 - 2006/1/27
N2 - Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.
AB - Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.
UR - http://www.scopus.com/inward/record.url?scp=32644469111&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.96.035501
DO - 10.1103/PhysRevLett.96.035501
M3 - Article
C2 - 16486722
AN - SCOPUS:32644469111
SN - 0031-9007
VL - 96
JO - Physical Review Letters
JF - Physical Review Letters
IS - 3
M1 - 035501
ER -