Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors

B. Sun, G. A. Shi, S. V.S. Nageswara Rao, M. Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman, G. Lüpke

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Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

Original languageEnglish
Article number035501
JournalPhysical Review Letters
Issue number3
StatePublished - Jan 27 2006


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