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Ultrasharp Lateral p-n Junctions in Modulation-Doped Graphene
Jesse Balgley
, Jackson Butler
, Sananda Biswas
, Zhehao Ge
, Samuel Lagasse
, Takashi Taniguchi
, Kenji Watanabe
, Matthew Cothrine
, David G. Mandrus
, Jairo Velasco
, Roser Valentí
, Erik A. Henriksen
Department of Physics
McKelvey School of Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
23
Scopus citations
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Keyphrases
Doped Graphene
100%
P-n Junction
100%
Modulation-doped
100%
Graphene
75%
First-principles Calculations
50%
Scanning Tunneling Microscopy
25%
Sub-10 Nm
25%
Flakes
25%
Potential Variation
25%
Nanometre
25%
Heterostructure
25%
Hexagonal Boron Nitride (h-BN)
25%
Scanning Tunneling Spectroscopy
25%
Electronic Transport
25%
Graphene Sheets
25%
Graphene Doping
25%
Charge Doping
25%
Device Resistance
25%
Insulating Barrier
25%
Material Science
Graphene
100%
Scanning Tunneling Microscopy
33%
Heterojunction
16%
Boron Nitride
16%