Ultralow-threshold Yb3+: SiO2 glass laser fabricated by the solgel process

Eric P. Ostby; Lan Yang; Kerry J. Vahala

doi:10.1364/OL.32.002650

Ultralow-threshold Yb³⁺: SiO₂ glass laser fabricated by the solgel process

Eric P. Ostby
, Lan Yang
, Kerry J. Vahala

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb³⁺ concentration on laser threshold is experimentally quantified.

Original language	English
Pages (from-to)	2650-2652
Number of pages	3
Journal	Optics Letters
Volume	32
Issue number	18
DOIs	https://doi.org/10.1364/OL.32.002650
State	Published - Sep 15 2007

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@article{e17827d86063409ba78ea09ae0f03be0,

title = "Ultralow-threshold Yb3+: SiO2 glass laser fabricated by the solgel process",

abstract = "A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb3+ concentration on laser threshold is experimentally quantified.",

author = "Ostby, \{Eric P.\} and Lan Yang and Vahala, \{Kerry J.\}",

year = "2007",

month = sep,

day = "15",

doi = "10.1364/OL.32.002650",

language = "English",

volume = "32",

pages = "2650--2652",

journal = "Optics Letters",

issn = "0146-9592",

number = "18",

}

TY - JOUR

T1 - Ultralow-threshold Yb3+

T2 - SiO2 glass laser fabricated by the solgel process

AU - Ostby, Eric P.

AU - Yang, Lan

AU - Vahala, Kerry J.

PY - 2007/9/15

Y1 - 2007/9/15

N2 - A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb3+ concentration on laser threshold is experimentally quantified.

AB - A Yb-doped silica microcavity laser on a silicon chip is fabricated from a solgel thin film. The high-Q microtoroid cavity, which has a finesse of 10,000, is evanescently coupled to an optical fiber taper. We report a threshold of 1.8 μW absorbed power that is, to the best of our knowledge, the lowest published threshold to date for any Yb-doped laser. The effect of Yb3+ concentration on laser threshold is experimentally quantified.

UR - https://www.scopus.com/pages/publications/39749087758

U2 - 10.1364/OL.32.002650

DO - 10.1364/OL.32.002650

M3 - Article

AN - SCOPUS:39749087758

SN - 0146-9592

VL - 32

SP - 2650

EP - 2652

JO - Optics Letters

JF - Optics Letters

IS - 18

ER -

Ultralow-threshold Yb³⁺: SiO₂ glass laser fabricated by the solgel process

Abstract

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