TY - JOUR
T1 - Twisted Type-II Rashba Homobilayers
T2 - A Platform for Tunable Topological Moiré Flat Bands
AU - Xu, Xilong
AU - Wang, Haonan
AU - Yang, Li
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025/10/1
Y1 - 2025/10/1
N2 - The recent discovery of topological flat bands in twisted transition metal dichalcogenide homobilayers and multilayer graphene has sparked significant research interest. Here, a new platform for realizing tunable topological moiré flat bands: twisted type-II Rashba homobilayers, is proposed. By maintaining centrosymmetry, the interplay between Rashba spin-orbit coupling and interlayer interactions generates an effective pseudo-antiferromagnetic field, opening a gap within the Dirac cone with non-zero Berry curvature. Using twisted BiTeI bilayers as an example, it is predicted that the emergence of flat topological bands with a remarkably narrow bandwidth (below 20 meV). Notably, the system undergoes a transition from a valley Hall insulator to a quantum spin Hall insulator as the twisting angle increases. This transition arises from a competition between the twisting-driven effective spin-orbit coupling and sublattice onsite energies presented in type-II Rashba moiré structures. The high tunability of Rashba materials in terms of the spin-orbit coupling strength, interlayer interaction, and twisting angle expands the range of materials suitable for functionalizing and manipulating correlated topological properties.
AB - The recent discovery of topological flat bands in twisted transition metal dichalcogenide homobilayers and multilayer graphene has sparked significant research interest. Here, a new platform for realizing tunable topological moiré flat bands: twisted type-II Rashba homobilayers, is proposed. By maintaining centrosymmetry, the interplay between Rashba spin-orbit coupling and interlayer interactions generates an effective pseudo-antiferromagnetic field, opening a gap within the Dirac cone with non-zero Berry curvature. Using twisted BiTeI bilayers as an example, it is predicted that the emergence of flat topological bands with a remarkably narrow bandwidth (below 20 meV). Notably, the system undergoes a transition from a valley Hall insulator to a quantum spin Hall insulator as the twisting angle increases. This transition arises from a competition between the twisting-driven effective spin-orbit coupling and sublattice onsite energies presented in type-II Rashba moiré structures. The high tunability of Rashba materials in terms of the spin-orbit coupling strength, interlayer interaction, and twisting angle expands the range of materials suitable for functionalizing and manipulating correlated topological properties.
KW - first-principles calculations
KW - moiré system
KW - topological flat bands
KW - twisted bilayer
KW - type-II Rashba
UR - https://www.scopus.com/pages/publications/105004203497
U2 - 10.1002/adfm.202425454
DO - 10.1002/adfm.202425454
M3 - Article
AN - SCOPUS:105004203497
SN - 1616-301X
VL - 35
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 40
M1 - 2425454
ER -