TY - JOUR
T1 - Transport Properties of GdTe1.8–xAsx (x = 0, 0.04)
AU - Poddig, Hagen
AU - Hobbis, Dean
AU - Alzahrani, Noha
AU - Doert, Thomas
AU - Nolas, George S.
N1 - Funding Information:
This work was supported by the ERASMUS+ ICM WORLDWIDE exchange program funded by the European Union. Financial Support by the German Research Foundation (DFG, grants no. Do 590/6‐1) is gratefully acknowledged. GSN acknowledges the support of the US National Science Foundation under grant No. DMR‐1748188. DH acknowledges the II‐VI Foundation Block‐Gift Program.
Funding Information:
This work was supported by the ERASMUS+ ICM WORLDWIDE exchange program funded by the European Union. Financial Support by the German Research Foundation (DFG, grants no. Do 590/6-1) is gratefully acknowledged. GSN acknowledges the support of the US National Science Foundation under grant No. DMR-1748188. DH acknowledges the II-VI Foundation Block-Gift Program.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/7/7
Y1 - 2020/7/7
N2 - Phase-pure polycrystalline samples of GdTe1.8 and GdTe1.76As0.04 were synthesized by reacting Gd2Te3 with elemental Te and As, employing a small amount of I2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n- to p-type conduction, with an order-of-magnitude reduction in resistivity with As doping at room-temperature as compared to GdTe1.8. The thermal conductivity of both specimens is low, the result of the crystal structure and atypical Te bonding in this material. The results presented are intended to expand on the research into rare-earth polychalcogenides and advance the fundamental investigation of these materials, as well as begin to evaluate their potential for thermoelectric applications.
AB - Phase-pure polycrystalline samples of GdTe1.8 and GdTe1.76As0.04 were synthesized by reacting Gd2Te3 with elemental Te and As, employing a small amount of I2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n- to p-type conduction, with an order-of-magnitude reduction in resistivity with As doping at room-temperature as compared to GdTe1.8. The thermal conductivity of both specimens is low, the result of the crystal structure and atypical Te bonding in this material. The results presented are intended to expand on the research into rare-earth polychalcogenides and advance the fundamental investigation of these materials, as well as begin to evaluate their potential for thermoelectric applications.
KW - Lanthanide metal polytellurides
KW - Semiconductors
KW - Transport properties
UR - http://www.scopus.com/inward/record.url?scp=85086445660&partnerID=8YFLogxK
U2 - 10.1002/ejic.202000195
DO - 10.1002/ejic.202000195
M3 - Article
AN - SCOPUS:85086445660
SN - 1434-1948
VL - 2020
SP - 2424
EP - 2427
JO - European Journal of Inorganic Chemistry
JF - European Journal of Inorganic Chemistry
IS - 25
ER -