Transport Properties of GdTe1.8–xAsx (x = 0, 0.04)

Hagen Poddig, Dean Hobbis, Noha Alzahrani, Thomas Doert, George S. Nolas

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Phase-pure polycrystalline samples of GdTe1.8 and GdTe1.76As0.04 were synthesized by reacting Gd2Te3 with elemental Te and As, employing a small amount of I2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n- to p-type conduction, with an order-of-magnitude reduction in resistivity with As doping at room-temperature as compared to GdTe1.8. The thermal conductivity of both specimens is low, the result of the crystal structure and atypical Te bonding in this material. The results presented are intended to expand on the research into rare-earth polychalcogenides and advance the fundamental investigation of these materials, as well as begin to evaluate their potential for thermoelectric applications.

Original languageEnglish
Pages (from-to)2424-2427
Number of pages4
JournalEuropean Journal of Inorganic Chemistry
Issue number25
StatePublished - Jul 7 2020


  • Lanthanide metal polytellurides
  • Semiconductors
  • Transport properties


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