The scaling of the effective band gaps in indium-arsenide quantum dots and wires

Fudong Wang; Heng Yu; Sohee Jeong; Jeffrey M. Pietryga; Jennifer A. Hollingsworth; Patrick C. Gibbons; William E. Buhro

doi:10.1021/nn800356z

The scaling of the effective band gaps in indium-arsenide quantum dots and wires

Fudong Wang
, Heng Yu
, Sohee Jeong
, Jeffrey M. Pietryga
, Jennifer A. Hollingsworth
, Patrick C. Gibbons
, William E. Buhro

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (ΔE_gs) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The ΔE_g values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d^-1), whereas the simplest confinement models predict that ΔE_g should scale with inverse-square diameter (d^-2). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band - conduction-band coupling in the narrow-gap InAs semiconductor.

Original language	English
Pages (from-to)	1903-1913
Number of pages	11
Journal	ACS nano
Volume	2
Issue number	9
DOIs	https://doi.org/10.1021/nn800356z
State	Published - Sep 2008

Keywords

Effective band gap
InAs quantum wire
Photoluminescence
Quantum confinement-nonparabolicity
Solution-liquid-solid
Valence-band - conduction-band coupling

Access to Document

10.1021/nn800356z

Cite this

@article{013ec2bb4cf645e1a8ab88c6a7870e39,

title = "The scaling of the effective band gaps in indium-arsenide quantum dots and wires",

abstract = "Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (ΔEgs) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The ΔEg values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d-1), whereas the simplest confinement models predict that ΔEg should scale with inverse-square diameter (d-2). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band - conduction-band coupling in the narrow-gap InAs semiconductor.",

keywords = "Effective band gap, InAs quantum wire, Photoluminescence, Quantum confinement-nonparabolicity, Solution-liquid-solid, Valence-band - conduction-band coupling",

author = "Fudong Wang and Heng Yu and Sohee Jeong and Pietryga, \{Jeffrey M.\} and Hollingsworth, \{Jennifer A.\} and Gibbons, \{Patrick C.\} and Buhro, \{William E.\}",

year = "2008",

month = sep,

doi = "10.1021/nn800356z",

language = "English",

volume = "2",

pages = "1903--1913",

journal = "ACS nano",

issn = "1936-0851",

number = "9",

}

TY - JOUR

T1 - The scaling of the effective band gaps in indium-arsenide quantum dots and wires

AU - Wang, Fudong

AU - Yu, Heng

AU - Jeong, Sohee

AU - Pietryga, Jeffrey M.

AU - Hollingsworth, Jennifer A.

AU - Gibbons, Patrick C.

AU - Buhro, William E.

PY - 2008/9

Y1 - 2008/9

N2 - Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (ΔEgs) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The ΔEg values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d-1), whereas the simplest confinement models predict that ΔEg should scale with inverse-square diameter (d-2). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band - conduction-band coupling in the narrow-gap InAs semiconductor.

AB - Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (ΔEgs) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The ΔEg values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d-1), whereas the simplest confinement models predict that ΔEg should scale with inverse-square diameter (d-2). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band - conduction-band coupling in the narrow-gap InAs semiconductor.

KW - Effective band gap

KW - InAs quantum wire

KW - Photoluminescence

KW - Quantum confinement-nonparabolicity

KW - Solution-liquid-solid

KW - Valence-band - conduction-band coupling

UR - https://www.scopus.com/pages/publications/54249088917

U2 - 10.1021/nn800356z

DO - 10.1021/nn800356z

M3 - Article

C2 - 19206431

AN - SCOPUS:54249088917

SN - 1936-0851

VL - 2

SP - 1903

EP - 1913

JO - ACS nano

JF - ACS nano

IS - 9

ER -

The scaling of the effective band gaps in indium-arsenide quantum dots and wires

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this