The effects of an O2 plasma on the optical properties of atomic layer deposited ZnO

M. A. Thomas; J. B. Cui

doi:10.1149/1.3701529

The effects of an O₂ plasma on the optical properties of atomic layer deposited ZnO

M. A. Thomas, J. B. Cui

Section of Interventional Radiology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The optical properties of atomic layer deposited (ALD) ZnO thin films were explored in detail. A plasma enhanced-ALD process using diethlyzinc and a remote O₂ plasma as well as a plasma enhanced thermal-ALD method in which a remote O₂ plasma step is added after each cycle of the classic thermal-ALD process were investigated. The optical properties of the films were found to depend strongly on the ALD process and plasma conditions. Absorption and room temperature photoluminescence (PL) measurements indicate both the bandgap and defect concentrations in the ZnO films are affected by the plasma. The low temperature PL characteristics of the films are also affected by the plasma, providing further evidence that it has distinct effects on the growth process and in turn ZnO material properties.

Original language	English
Title of host publication	Wide-Bandgap Semiconductor Materials and Devices 13
Publisher	Electrochemical Society Inc.
Pages	87-95
Number of pages	9
Edition	7
ISBN (Electronic)	9781607683179
ISBN (Print)	9781566779593
DOIs	https://doi.org/10.1149/1.3701529
State	Published - 2012
Event	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States Duration: May 6 2012 → May 10 2012

Publication series

Name	ECS Transactions
Number	7
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	05/6/12 → 05/10/12

Access to Document

10.1149/1.3701529

Cite this

@inproceedings{ddf2871e832a4aecb7824c47a15479cc,

title = "The effects of an O2 plasma on the optical properties of atomic layer deposited ZnO",

abstract = "The optical properties of atomic layer deposited (ALD) ZnO thin films were explored in detail. A plasma enhanced-ALD process using diethlyzinc and a remote O2 plasma as well as a plasma enhanced thermal-ALD method in which a remote O2 plasma step is added after each cycle of the classic thermal-ALD process were investigated. The optical properties of the films were found to depend strongly on the ALD process and plasma conditions. Absorption and room temperature photoluminescence (PL) measurements indicate both the bandgap and defect concentrations in the ZnO films are affected by the plasma. The low temperature PL characteristics of the films are also affected by the plasma, providing further evidence that it has distinct effects on the growth process and in turn ZnO material properties.",

author = "Thomas, {M. A.} and Cui, {J. B.}",

year = "2012",

doi = "10.1149/1.3701529",

language = "English",

isbn = "9781566779593",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "87--95",

booktitle = "Wide-Bandgap Semiconductor Materials and Devices 13",

edition = "7",

note = "13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

Thomas, MA & Cui, JB 2012, The effects of an O₂ plasma on the optical properties of atomic layer deposited ZnO. in Wide-Bandgap Semiconductor Materials and Devices 13. 7 edn, ECS Transactions, no. 7, vol. 45, Electrochemical Society Inc., pp. 87-95, 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting, Seattle, WA, United States, 05/6/12. https://doi.org/10.1149/1.3701529

TY - GEN

T1 - The effects of an O2 plasma on the optical properties of atomic layer deposited ZnO

AU - Thomas, M. A.

AU - Cui, J. B.

PY - 2012

Y1 - 2012

N2 - The optical properties of atomic layer deposited (ALD) ZnO thin films were explored in detail. A plasma enhanced-ALD process using diethlyzinc and a remote O2 plasma as well as a plasma enhanced thermal-ALD method in which a remote O2 plasma step is added after each cycle of the classic thermal-ALD process were investigated. The optical properties of the films were found to depend strongly on the ALD process and plasma conditions. Absorption and room temperature photoluminescence (PL) measurements indicate both the bandgap and defect concentrations in the ZnO films are affected by the plasma. The low temperature PL characteristics of the films are also affected by the plasma, providing further evidence that it has distinct effects on the growth process and in turn ZnO material properties.

AB - The optical properties of atomic layer deposited (ALD) ZnO thin films were explored in detail. A plasma enhanced-ALD process using diethlyzinc and a remote O2 plasma as well as a plasma enhanced thermal-ALD method in which a remote O2 plasma step is added after each cycle of the classic thermal-ALD process were investigated. The optical properties of the films were found to depend strongly on the ALD process and plasma conditions. Absorption and room temperature photoluminescence (PL) measurements indicate both the bandgap and defect concentrations in the ZnO films are affected by the plasma. The low temperature PL characteristics of the films are also affected by the plasma, providing further evidence that it has distinct effects on the growth process and in turn ZnO material properties.

UR - http://www.scopus.com/inward/record.url?scp=84869026861&partnerID=8YFLogxK

U2 - 10.1149/1.3701529

DO - 10.1149/1.3701529

M3 - Conference contribution

AN - SCOPUS:84869026861

SN - 9781566779593

T3 - ECS Transactions

SP - 87

EP - 95

BT - Wide-Bandgap Semiconductor Materials and Devices 13

PB - Electrochemical Society Inc.

T2 - 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -