Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires

John J. Glennon; Rui Tang; William E. Buhro; Richard A. Loomis

doi:10.1021/nl0714583

Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires

John J. Glennon, Rui Tang, William E. Buhro, Richard A. Loomis

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Photoluminescence microscopy studies have detected synchronous- photoiuminescence-intensity fluctuations along entire cadmium selenide quantum wires under continuous illumination. While similar photoluminescence blinking has been reported previously for semiconductor quantum dots and rods, the observation of synchronous blinking spanning the entire length of quantum wires, with diameters «9 nm and lengths >5 μm, is remarkable. We propose a mechanism to account for the synchronous blinking that is based on a dynamic, photolytic filling of surface-trap sites.

Original language	English
Pages (from-to)	3290-3295
Number of pages	6
Journal	Nano Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1021/nl0714583
State	Published - Nov 1 2007

Access to Document

10.1021/nl0714583

Cite this

@article{bdee4360f1cd4342af9b9d56c3ca2df9,

title = "Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires",

abstract = "Photoluminescence microscopy studies have detected synchronous- photoiuminescence-intensity fluctuations along entire cadmium selenide quantum wires under continuous illumination. While similar photoluminescence blinking has been reported previously for semiconductor quantum dots and rods, the observation of synchronous blinking spanning the entire length of quantum wires, with diameters «9 nm and lengths >5 μm, is remarkable. We propose a mechanism to account for the synchronous blinking that is based on a dynamic, photolytic filling of surface-trap sites.",

author = "Glennon, {John J.} and Rui Tang and Buhro, {William E.} and Loomis, {Richard A.}",

year = "2007",

month = nov,

day = "1",

doi = "10.1021/nl0714583",

language = "English",

volume = "7",

pages = "3290--3295",

journal = "Nano Letters",

issn = "1530-6984",

number = "11",

}

TY - JOUR

T1 - Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires

AU - Glennon, John J.

AU - Tang, Rui

AU - Buhro, William E.

AU - Loomis, Richard A.

PY - 2007/11/1

Y1 - 2007/11/1

N2 - Photoluminescence microscopy studies have detected synchronous- photoiuminescence-intensity fluctuations along entire cadmium selenide quantum wires under continuous illumination. While similar photoluminescence blinking has been reported previously for semiconductor quantum dots and rods, the observation of synchronous blinking spanning the entire length of quantum wires, with diameters «9 nm and lengths >5 μm, is remarkable. We propose a mechanism to account for the synchronous blinking that is based on a dynamic, photolytic filling of surface-trap sites.

AB - Photoluminescence microscopy studies have detected synchronous- photoiuminescence-intensity fluctuations along entire cadmium selenide quantum wires under continuous illumination. While similar photoluminescence blinking has been reported previously for semiconductor quantum dots and rods, the observation of synchronous blinking spanning the entire length of quantum wires, with diameters «9 nm and lengths >5 μm, is remarkable. We propose a mechanism to account for the synchronous blinking that is based on a dynamic, photolytic filling of surface-trap sites.

UR - http://www.scopus.com/inward/record.url?scp=36749079294&partnerID=8YFLogxK

U2 - 10.1021/nl0714583

DO - 10.1021/nl0714583

M3 - Article

C2 - 17927258

AN - SCOPUS:36749079294

SN - 1530-6984

VL - 7

SP - 3290

EP - 3295

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this