Structure-dependent vibrational lifetimes of hydrogen in silicon

G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, L. C. Feldman

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Abstract

A comparision of the temperature dependence of the vibrational lifetime of two structuraly distinct point defects in crystalline silicon, H2*, and intersitial defect, and HV . VH110, a vaccancy complex was reported. Different temperature dependences showed that these vibrationaly excited defects decay into different accepting vibrational modes. The temperature dependence of the lifetime of H2* was due to by TA phonons, while HV . VH110 was governed by LA phonons. The behavior was explained in terms of distinctly different local structure of these defects and the accompanying local vibrational modes.

Original languageEnglish
Article number135501
Pages (from-to)1355011-1355014
Number of pages4
JournalPhysical Review Letters
Volume88
Issue number13
StatePublished - Apr 1 2002
Externally publishedYes

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    Lüpke, G., Zhang, X., Sun, B., Fraser, A., Tolk, N. H., & Feldman, L. C. (2002). Structure-dependent vibrational lifetimes of hydrogen in silicon. Physical Review Letters, 88(13), 1355011-1355014. [135501].