A comparision of the temperature dependence of the vibrational lifetime of two structuraly distinct point defects in crystalline silicon, H2*, and intersitial defect, and HV . VH110, a vaccancy complex was reported. Different temperature dependences showed that these vibrationaly excited defects decay into different accepting vibrational modes. The temperature dependence of the lifetime of H2* was due to by TA phonons, while HV . VH110 was governed by LA phonons. The behavior was explained in terms of distinctly different local structure of these defects and the accompanying local vibrational modes.
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - Apr 1 2002|