Abstract
The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10 4 and mobility up to 116 cm 2/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.
| Original language | English |
|---|---|
| Pages (from-to) | 7454-7462 |
| Number of pages | 9 |
| Journal | ACS nano |
| Volume | 6 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 28 2012 |
Keywords
- carbon nanotube
- controlled synthesis
- quartz
- semiconducting
- silicon substrate
- transistor