Regiospecific aromatic fluorodemetallation of group IVb metalloarenes using elemental fluorine or acetyl hypofluorite

H. H. Coenen, S. M. Moerlein

Research output: Contribution to journalArticlepeer-review

59 Scopus citations


The reactions of fluorine and acetyl hypofluorite with trimethylaryltin, -germanium, and -silicon compounds were studied using fluorine-18 (T 1 2 = 110 min) as a radiochemical tracer. The fluorodemetallation of phenyl derivatives by sub-stoichiometric F2 to yield fluorobenzene was almost independent of temperature (-78° to 22°C), reaction time (2 to 200 min) and substrate concentration (2 to 150 mM). The reactions of both fluorination agents were not affected by perhalogenated methanes as solvents, but completely suppressed in solvents with active hydrogens. In a series of p-substituted phenyl derivatives (CH3O-, CH3-, H-, F-, Br-, CF3-,O2N-), a decrease in the fluorodemetallation yield was observed in the order Sn > Ge > Si, and with rings containing electron-withdrawing groups. The reactivity of CH3CO2F with stannylated arenes was equal to that of F2, but much lower than that of F2 when arylgermanium or -silicon derivatives were used. These findings are in agreement with a substitution mechanism involving a σ-complex. The only side-products which formed from the corresponding metallated anisyl- and toluyl- compounds were 2-fluoroanisole (< 16%) and benzylfluoride (< 5.5%). No direct hydrogen substitution was observed in the other substrates investigated. The high regiospecific fluorination yields obtained make aromatic fluorination of group IVb metallated arenes (especially of tin) a very attractive preparative fluorination and radio-labelling method.

Original languageEnglish
Pages (from-to)63-75
Number of pages13
JournalJournal of Fluorine Chemistry
Issue number1
StatePublished - Jun 1987


Dive into the research topics of 'Regiospecific aromatic fluorodemetallation of group IVb metalloarenes using elemental fluorine or acetyl hypofluorite'. Together they form a unique fingerprint.

Cite this