Reducing indirect programming mismatch due to oxide-traps using dual-channel floating-gate transistors

Chenling Huang, Shantanu Chakrabartty

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents a dual-channel architecture for floating-gate transistors that can alleviate the detrimental effects of oxide-traps seen in indirect programming techniques. The proposed transistor consists of four input/output ports that allow multiple paths for drain currents to flow and yet share the same gate-oxide and poly-silicon gate. As a result, one pair of the ports can be used for indirect programming, whereas the other pair can be actively connected to other analog circuits. Compared with the existing approaches for floating-gate programming, the proposed technique avoids disruption of the circuit operation and eliminates the effect of oxide-traps as well. In this paper we present measured results obtained from a dual-channel floatinggate current reference which has been fabricated in a 0.5-μm standard CMOS process.

Original languageEnglish
Title of host publication2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Pages1783-1786
Number of pages4
DOIs
StatePublished - 2009
Event2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009 - Taipei, Taiwan, Province of China
Duration: May 24 2009May 27 2009

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2009 IEEE International Symposium on Circuits and Systems, ISCAS 2009
Country/TerritoryTaiwan, Province of China
CityTaipei
Period05/24/0905/27/09

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