TY - JOUR
T1 - Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices
AU - Shim, Jaewoo
AU - Kang, Dong Ho
AU - Kim, Yunjo
AU - Kum, Hyun
AU - Kong, Wei
AU - Bae, Sang Hoon
AU - Almansouri, Ibraheem
AU - Lee, Kyusang
AU - Park, Jin Hong
AU - Kim, Jeehwan
N1 - Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2018/7
Y1 - 2018/7
N2 - The rediscovery of graphene in 2004 triggered an explosive expansion of research on various van der Waals (vdW) materials. The atomic layers of these vdW materials do not have surface crystal defects and are bonded by weak vdW interactions, thus the vdW materials can be stacked onto each other to form vdW heterojunction structures without needing to consider the lattice mismatch issue. In addition, the broad library of vdW materials makes it possible to design diverse types of heterojunctions with a wide range of band alignments, bandgaps, and electron affinities. Vertical vdW heterostructures especially offer numerous possibilities for the realization of high-performance electronic and optoelectronic devices. Therefore, these vdW heterostructures have received significant attention, and extensive relevant experimental results have been reported in the past few years. In this review, we first introduce the transfer techniques to form vdW heterojunction structures. Next, we discuss recent progress in vdW heterostructure-based electronic and optoelectronic devices, including vertical field effect transistors, negative differential resistance devices, memories, photodetectors, photovoltaic devices, and light-emitting diodes. Finally, we conclude this review by discussing the current challenges facing vdW heterojunction structure-based devices and our perspective on future research directions.
AB - The rediscovery of graphene in 2004 triggered an explosive expansion of research on various van der Waals (vdW) materials. The atomic layers of these vdW materials do not have surface crystal defects and are bonded by weak vdW interactions, thus the vdW materials can be stacked onto each other to form vdW heterojunction structures without needing to consider the lattice mismatch issue. In addition, the broad library of vdW materials makes it possible to design diverse types of heterojunctions with a wide range of band alignments, bandgaps, and electron affinities. Vertical vdW heterostructures especially offer numerous possibilities for the realization of high-performance electronic and optoelectronic devices. Therefore, these vdW heterostructures have received significant attention, and extensive relevant experimental results have been reported in the past few years. In this review, we first introduce the transfer techniques to form vdW heterojunction structures. Next, we discuss recent progress in vdW heterostructure-based electronic and optoelectronic devices, including vertical field effect transistors, negative differential resistance devices, memories, photodetectors, photovoltaic devices, and light-emitting diodes. Finally, we conclude this review by discussing the current challenges facing vdW heterojunction structure-based devices and our perspective on future research directions.
UR - http://www.scopus.com/inward/record.url?scp=85046025385&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2018.02.104
DO - 10.1016/j.carbon.2018.02.104
M3 - Article
AN - SCOPUS:85046025385
SN - 0008-6223
VL - 133
SP - 78
EP - 89
JO - Carbon
JF - Carbon
ER -