Optical nanospectroscopy study of ion-implanted silicon and biological growth medium

  • A. Cricenti
  • , V. Marocchi
  • , R. Generosi
  • , M. Luce
  • , P. Perfetti
  • , D. Vobornik
  • , G. Margaritondo
  • , D. Talley
  • , P. Thielen
  • , J. S. Sanghera
  • , I. D. Aggarwal
  • , J. K. Miller
  • , N. H. Tolk
  • , D. W. Piston

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit.

Original languageEnglish
Pages (from-to)21-25
Number of pages5
JournalJournal of Alloys and Compounds
Volume362
Issue number1-2
DOIs
StatePublished - Jan 14 2004

Keywords

  • Internal photoemission
  • Nanostructures
  • Reflectivity
  • Scanning near-field optical microscopy

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