Optical nanospectroscopy study of ion-implanted silicon and biological growth medium

A. Cricenti, V. Marocchi, R. Generosi, M. Luce, P. Perfetti, D. Vobornik, G. Margaritondo, D. Talley, P. Thielen, J. S. Sanghera, I. D. Aggarwal, J. K. Miller, N. H. Tolk, D. W. Piston

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit.

Original languageEnglish
Pages (from-to)21-25
Number of pages5
JournalJournal of Alloys and Compounds
Volume362
Issue number1-2
DOIs
StatePublished - Jan 14 2004
Externally publishedYes

Keywords

  • Internal photoemission
  • Nanostructures
  • Reflectivity
  • Scanning near-field optical microscopy

Fingerprint Dive into the research topics of 'Optical nanospectroscopy study of ion-implanted silicon and biological growth medium'. Together they form a unique fingerprint.

  • Cite this

    Cricenti, A., Marocchi, V., Generosi, R., Luce, M., Perfetti, P., Vobornik, D., Margaritondo, G., Talley, D., Thielen, P., Sanghera, J. S., Aggarwal, I. D., Miller, J. K., Tolk, N. H., & Piston, D. W. (2004). Optical nanospectroscopy study of ion-implanted silicon and biological growth medium. Journal of Alloys and Compounds, 362(1-2), 21-25. https://doi.org/10.1016/S0925-8388(03)00557-7