Abstract
The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we present SNOM results on boron-doped silicon and on biological growth medium by means of shear-force, reflectivity and photocurrent measurements. Such experiments allowed us to identify boron clusters embedded in silicon and the distribution of growth medium constituents with a lateral resolution well below the diffraction limit.
Original language | English |
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Pages (from-to) | 21-25 |
Number of pages | 5 |
Journal | Journal of Alloys and Compounds |
Volume | 362 |
Issue number | 1-2 |
DOIs | |
State | Published - Jan 14 2004 |
Keywords
- Internal photoemission
- Nanostructures
- Reflectivity
- Scanning near-field optical microscopy