Non-equilibrium carrier transport in a high-quality InN film grown on GaN

L. W. Liang, K. T. Tsen, C. Poweleit, D. K. Ferry, Shaw Wei D. Tsen, Hai Lu, William J. Schaff

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Picosecond Raman spectroscopy has been used to interogate non-equilibrium electron transport in a high quality, single-crystal wurtzite structure InN thin film grown on GaN. The experimental results demonstrate that electron drift velocity as high as (5.0±0.5)x107 cm/sec can be achieved at room temperature. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric field intensity inside our InN film system is about 75 kV/cm.

Original languageEnglish
Pages (from-to)2297-2300
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume2
Issue number7
DOIs
StatePublished - 2005

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