Multiple-scattering of near-edge x-ray absorption fine structure of Sulphur-passivated InP(100) surface

Song Cao; Jing Chang Tang; Shao Lai Shen; Geng Sheng Chen; Dan Ma

doi:10.1088/0256-307X/20/7/352

Multiple-scattering of near-edge x-ray absorption fine structure of Sulphur-passivated InP(100) surface

Song Cao, Jing Chang Tang, Shao Lai Shen, Geng Sheng Chen, Dan Ma

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We use the multiple-scattering duster method to calculate the sulphur 1s near-edge x-ray absorption one structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 Å and 3.05 Å coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

Original language	English
Pages (from-to)	1151-1154
Number of pages	4
Journal	Chinese Physics Letters
Volume	20
Issue number	7
DOIs	https://doi.org/10.1088/0256-307X/20/7/352
State	Published - Jul 2003

Access to Document

10.1088/0256-307X/20/7/352

Cite this

@article{52a3a59985c54405b6c9c8234a097c68,

title = "Multiple-scattering of near-edge x-ray absorption fine structure of Sulphur-passivated InP(100) surface",

abstract = "We use the multiple-scattering duster method to calculate the sulphur 1s near-edge x-ray absorption one structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 {\AA} and 3.05 {\AA} coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.",

author = "Song Cao and Tang, {Jing Chang} and Shen, {Shao Lai} and Chen, {Geng Sheng} and Dan Ma",

year = "2003",

month = jul,

doi = "10.1088/0256-307X/20/7/352",

language = "English",

volume = "20",

pages = "1151--1154",

journal = "Chinese Physics Letters",

issn = "0256-307X",

number = "7",

}

TY - JOUR

T1 - Multiple-scattering of near-edge x-ray absorption fine structure of Sulphur-passivated InP(100) surface

AU - Cao, Song

AU - Tang, Jing Chang

AU - Shen, Shao Lai

AU - Chen, Geng Sheng

AU - Ma, Dan

PY - 2003/7

Y1 - 2003/7

N2 - We use the multiple-scattering duster method to calculate the sulphur 1s near-edge x-ray absorption one structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 Å and 3.05 Å coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

AB - We use the multiple-scattering duster method to calculate the sulphur 1s near-edge x-ray absorption one structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengths of 2.05 Å and 3.05 Å coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.

UR - http://www.scopus.com/inward/record.url?scp=4043127418&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/20/7/352

DO - 10.1088/0256-307X/20/7/352

M3 - Article

AN - SCOPUS:4043127418

SN - 0256-307X

VL - 20

SP - 1151

EP - 1154

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 7

ER -

Multiple-scattering of near-edge x-ray absorption fine structure of Sulphur-passivated InP(100) surface

Abstract

Access to Document

Other files and links

Fingerprint

Cite this