Abstract
A new photolithographic process for the patterning of WO3 is reported. A layer of sputtered polycrystalline WO3 can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Pt microelectrodes each ∼50 μm long, 2 μm wide, and 0.3 μm thick, and spaced 1.2 μm apart. The modified microelectrode arrays were characterized by electrochemistry, surface profilometry, and scanning electron microscopy. A pair of microelectrodes connected by WO3 comprises a microelectrochemical transistor with pH-dependent electrical characteristics based on the pH and potential dependent conductivity of WO3 associated with the reversible electrochemical reaction WO3+nH++ne-⇄H nWO3.
| Original language | English |
|---|---|
| Pages (from-to) | 965-968 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 66 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1989 |