TY - JOUR
T1 - Methods for the ICP-OES Analysis of Semiconductor Materials
AU - Morrison, Calynn
AU - Sun, Haochen
AU - Yao, Yuewei
AU - Loomis, Richard A.
AU - Buhro, William E.
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/3/10
Y1 - 2020/3/10
N2 - The techniques employed in the compositional analysis of semiconductor materials by inductively coupled plasma optical emission spectroscopy (ICP-OES) dramatically influence the accuracy and reproducibility of the results. We describe methods for sample preparation, calibration, standard selection, and data collection. Specific protocols are suggested for the analysis of II-VI compounds and nanocrystals containing the elements Zn, Cd, S, Se, and Te. We expect the methods provided will apply more generally to semiconductor materials from other families, such as to III-V and IV-VI nanocrystals.
AB - The techniques employed in the compositional analysis of semiconductor materials by inductively coupled plasma optical emission spectroscopy (ICP-OES) dramatically influence the accuracy and reproducibility of the results. We describe methods for sample preparation, calibration, standard selection, and data collection. Specific protocols are suggested for the analysis of II-VI compounds and nanocrystals containing the elements Zn, Cd, S, Se, and Te. We expect the methods provided will apply more generally to semiconductor materials from other families, such as to III-V and IV-VI nanocrystals.
UR - https://www.scopus.com/pages/publications/85081918930
U2 - 10.1021/acs.chemmater.0c00255
DO - 10.1021/acs.chemmater.0c00255
M3 - Article
AN - SCOPUS:85081918930
SN - 0897-4756
VL - 32
SP - 1760
EP - 1768
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 5
ER -