MEASUREMENTS OF STRUCTURAL RELAXATION IN AMORPHOUS Pd82Si18: X-RAY DIFFRACTION AND ELECTRICAL RESISTIVITY.

E. Chason; K. F. Kelton; P. S. Pershan; L. Sorensen; F. Spaepen; A. H. Weiss

doi:10.1016/b978-0-444-86939-5.50164-0

MEASUREMENTS OF STRUCTURAL RELAXATION IN AMORPHOUS Pd₈₂Si₁₈: X-RAY DIFFRACTION AND ELECTRICAL RESISTIVITY.

E. Chason
, K. F. Kelton
, P. S. Pershan
, L. Sorensen
, F. Spaepen
, A. H. Weiss

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Changes in the x-ray structure factor and electrical resistivity were measured at room temperature as a function of isothermal annealing time. The samples were splat quenched in air to produce thin disks. The good agreement demonstrates that the changes in resistivity are caused by structural changes. The Ziman theory adequately describes the electron scattering.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	North-Holland
Pages	683-686
Number of pages	4
ISBN (Print)	0444869395, 9780444869395
DOIs	https://doi.org/10.1016/b978-0-444-86939-5.50164-0
State	Published - 1985

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Volume	1

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10.1016/b978-0-444-86939-5.50164-0

Cite this

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title = "MEASUREMENTS OF STRUCTURAL RELAXATION IN AMORPHOUS Pd82Si18: X-RAY DIFFRACTION AND ELECTRICAL RESISTIVITY.",

abstract = "Changes in the x-ray structure factor and electrical resistivity were measured at room temperature as a function of isothermal annealing time. The samples were splat quenched in air to produce thin disks. The good agreement demonstrates that the changes in resistivity are caused by structural changes. The Ziman theory adequately describes the electron scattering.",

author = "E. Chason and Kelton, \{K. F.\} and Pershan, \{P. S.\} and L. Sorensen and F. Spaepen and Weiss, \{A. H.\}",

year = "1985",

doi = "10.1016/b978-0-444-86939-5.50164-0",

language = "English",

isbn = "0444869395",

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pages = "683--686",

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T1 - MEASUREMENTS OF STRUCTURAL RELAXATION IN AMORPHOUS Pd82Si18

T2 - X-RAY DIFFRACTION AND ELECTRICAL RESISTIVITY.

AU - Chason, E.

AU - Kelton, K. F.

AU - Pershan, P. S.

AU - Sorensen, L.

AU - Spaepen, F.

AU - Weiss, A. H.

PY - 1985

Y1 - 1985

N2 - Changes in the x-ray structure factor and electrical resistivity were measured at room temperature as a function of isothermal annealing time. The samples were splat quenched in air to produce thin disks. The good agreement demonstrates that the changes in resistivity are caused by structural changes. The Ziman theory adequately describes the electron scattering.

AB - Changes in the x-ray structure factor and electrical resistivity were measured at room temperature as a function of isothermal annealing time. The samples were splat quenched in air to produce thin disks. The good agreement demonstrates that the changes in resistivity are caused by structural changes. The Ziman theory adequately describes the electron scattering.

UR - https://www.scopus.com/pages/publications/0022300094

U2 - 10.1016/b978-0-444-86939-5.50164-0

DO - 10.1016/b978-0-444-86939-5.50164-0

M3 - Conference contribution

AN - SCOPUS:0022300094

SN - 0444869395

SN - 9780444869395

SP - 683

EP - 686

BT - Unknown Host Publication Title

PB - North-Holland

ER -

MEASUREMENTS OF STRUCTURAL RELAXATION IN AMORPHOUS Pd₈₂Si₁₈: X-RAY DIFFRACTION AND ELECTRICAL RESISTIVITY.

Abstract

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