Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Huan Zhao; Linghan Zhu; Xiangzhi Li; Vigneshwaran Chandrasekaran; Jon Kevin Baldwin; Michael T. Pettes; Andrei Piryatinski; Li Yang; Han Htoon

doi:10.1021/acs.nanolett.3c03296

Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Huan Zhao
, Linghan Zhu
, Xiangzhi Li
, Vigneshwaran Chandrasekaran
, Jon Kevin Baldwin
, Michael T. Pettes
, Andrei Piryatinski
, Li Yang
, Han Htoon

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS₂/WSe₂ heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.

Original language	English
Pages (from-to)	11006-11012
Number of pages	7
Journal	Nano Letters
Volume	23
Issue number	23
DOIs	https://doi.org/10.1021/acs.nanolett.3c03296
State	Published - Dec 13 2023

Keywords

2D heterostructures
interlayer exciton
quantum emitters
TMDC

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10.1021/acs.nanolett.3c03296

Cite this

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title = "Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation",

abstract = "Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.",

keywords = "2D heterostructures, interlayer exciton, quantum emitters, TMDC",

author = "Huan Zhao and Linghan Zhu and Xiangzhi Li and Vigneshwaran Chandrasekaran and Baldwin, \{Jon Kevin\} and Pettes, \{Michael T.\} and Andrei Piryatinski and Li Yang and Han Htoon",

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doi = "10.1021/acs.nanolett.3c03296",

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AU - Zhao, Huan

AU - Zhu, Linghan

AU - Li, Xiangzhi

AU - Chandrasekaran, Vigneshwaran

AU - Baldwin, Jon Kevin

AU - Pettes, Michael T.

AU - Piryatinski, Andrei

AU - Yang, Li

AU - Htoon, Han

PY - 2023/12/13

Y1 - 2023/12/13

N2 - Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.

AB - Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.

KW - 2D heterostructures

KW - interlayer exciton

KW - quantum emitters

KW - TMDC

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DO - 10.1021/acs.nanolett.3c03296

M3 - Article

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IS - 23

ER -

Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

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Keywords

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