Large-area synthesis of high-quality monolayer 1T’-WTe2 flakes

  • Carl H. Naylor
  • , William M. Parkin
  • , Zhaoli Gao
  • , Hojin Kang
  • , Mehmet Noyan
  • , Robert B. Wexler
  • , Liang Z. Tan
  • , Youngkuk Kim
  • , Christopher E. Kehayias
  • , Frank Streller
  • , Yu Ren Zhou
  • , Robert Carpick
  • , Zhengtang Luo
  • , Yung Woo Park
  • , Andrew M. Rappe
  • , Marija Drndić
  • , James M. Kikkawa
  • , A. T.Charlie Johnson

Research output: Contribution to journalArticlepeer-review

94 Scopus citations

Abstract

Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T’-WTe2, which in multilayer form is reported to possess a large non saturating magnetoresistance, pressure induced superconductivity, and a weak antilocalization effect, but electrical data for the monolayer is yet to be reported due to its rapid degradation in air. Here we report a reliable and reproducible large-area growth process for obtaining many monolayer 1T’-WTe2 flakes. We confirmed the composition and structure of monolayer 1T’-WTe2 flakes using x-ray photoelectron spectroscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy and aberration corrected transmission electron microscopy. We studied the time dependent degradation of monolayer 1T’-WTe2 under ambient conditions, and we used first-principles calculations to identify reaction with oxygen as the degradation mechanism. Finally we investigated the electrical properties of monolayer 1T’-WTe2 and found metallic conduction at low temperature along with a weak antilocalization effect that is evidence for strong spin–orbit coupling.

Original languageEnglish
Article number021008
Journal2D Materials
Volume4
Issue number2
DOIs
StatePublished - Jun 2017

Keywords

  • Chemical vapour deposition
  • Monolayer
  • Transition metal dichalcogenides
  • WTe2
  • Weak antilocalization

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