Ionic polarization modulation for wide-bandgap high-κ 2D insulators: 2D materials

Yunseok Choi; Seung Il Kim; Sang Hoon Bae

doi:10.1038/s41563-024-02106-5

Ionic polarization modulation for wide-bandgap high-κ 2D insulators: 2D materials

Yunseok Choi
, Seung Il Kim
, Sang Hoon Bae

Department of Mechanical Engineering & Materials Science

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

2D monocrystalline Gd₂O₅ is synthesized, which exhibits a wide bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS₂-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd₂O₅ for advanced transistor applications.

Original language	English
Article number	3385
Pages (from-to)	163-164
Number of pages	2
Journal	Nature Materials
Volume	24
Issue number	2
DOIs	https://doi.org/10.1038/s41563-024-02106-5
State	Published - Feb 2025

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@article{1480c07a99d54f45a7fc529de09e2caa,

title = "Ionic polarization modulation for wide-bandgap high-κ 2D insulators: 2D materials",

abstract = "2D monocrystalline Gd2O5 is synthesized, which exhibits a wide bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS2-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd2O5 for advanced transistor applications.",

author = "Yunseok Choi and Kim, \{Seung Il\} and Bae, \{Sang Hoon\}",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2025.",

year = "2025",

month = feb,

doi = "10.1038/s41563-024-02106-5",

language = "English",

volume = "24",

pages = "163--164",

journal = "Nature Materials",

issn = "1476-1122",

number = "2",

}

TY - JOUR

T1 - Ionic polarization modulation for wide-bandgap high-κ 2D insulators

T2 - 2D materials

AU - Choi, Yunseok

AU - Kim, Seung Il

AU - Bae, Sang Hoon

N1 - Publisher Copyright: © Springer Nature Limited 2025.

PY - 2025/2

Y1 - 2025/2

N2 - 2D monocrystalline Gd2O5 is synthesized, which exhibits a wide bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS2-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd2O5 for advanced transistor applications.

AB - 2D monocrystalline Gd2O5 is synthesized, which exhibits a wide bandgap with a high dielectric constant (κ), attributed to its strong ionic polarization capability. These properties enable MoS2-based transistors to achieve an exceptionally low subthreshold swing and a high on/off current ratio, highlighting the potential of Gd2O5 for advanced transistor applications.

UR - https://www.scopus.com/pages/publications/85218216804

U2 - 10.1038/s41563-024-02106-5

DO - 10.1038/s41563-024-02106-5

M3 - Comment/debate

C2 - 39849117

AN - SCOPUS:85218216804

SN - 1476-1122

VL - 24

SP - 163

EP - 164

JO - Nature Materials

JF - Nature Materials

IS - 2

M1 - 3385

ER -

Ionic polarization modulation for wide-bandgap high-κ 2D insulators: 2D materials

Abstract

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