TY - GEN
T1 - Ion orbits in electron shading damage
AU - Madziwa-Nussinov, T.
AU - Arnush, D.
AU - Chen, F. F.
N1 - Publisher Copyright:
© 2003 IEEE.
PY - 2003
Y1 - 2003
N2 - In Hashimoto's' hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a "collector" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.
AB - In Hashimoto's' hypothetical mechanism for electron shading damage, the photoresist at the tops of trenches and vias collects a negative charge from the thermal electrons, creating an electric field (E-field) which prevents electrons from reaching the trench bottom, where a "collector" is located. The ions, accelerated by the sheath electric field, are driven straight into the trench and impinge on the collector, charging it positive if it is isolated. The electric fields inside the trench can also deflect the ions into the sidewalls, causing notching and other deformations of the etch profile The present effort aims to test the hypothesis by scaling the submicron features to macroscopic size so that the currents and potentials inside the trench can be measured and compared with computations. This paper concerns the theoretical part of the work; namely, self-consistent computations of the E-fields and ion orbits inside the trenches.
UR - https://www.scopus.com/pages/publications/84973659503
U2 - 10.1109/PPID.2003.1200926
DO - 10.1109/PPID.2003.1200926
M3 - Conference contribution
AN - SCOPUS:84973659503
T3 - International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
SP - 89
EP - 92
BT - 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
A2 - Eriguchi, Koji
A2 - Krishnan, S.
A2 - Hook, Terence
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
Y2 - 24 April 2003 through 25 April 2003
ER -