Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications

You Seung Rim; Huajun Chen; Bowen Zhu; Sang Hoon Bae; Shuanglin Zhu; Philip Jwo Li; Isaac Caleb Wang; Yang Yang

doi:10.1002/admi.201700020

Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications

You Seung Rim
, Huajun Chen
, Bowen Zhu
, Sang Hoon Bae
, Shuanglin Zhu
, Philip Jwo Li
, Isaac Caleb Wang
, Yang Yang

Department of Mechanical Engineering & Materials Science

Research output: Contribution to journal › Review article › peer-review

89 Scopus citations

Abstract

In the last decade, there has been considerable development in the area of oxide semiconductors, owing to their superior electrical properties as compared to a-Si:H, and lower cost and better uniformity over large areas as compared to poly-Si. On the other hand, multi-functional sensing systems play a significant role in building a bridge across bio/electronic interface and require advanced thin-film transistors (TFT) as sensing components and signal processing circuits. High-performance oxide TFTs are constructed based on material design, advanced processing and device architecture and provide higher sensitivity when compared with other active thin-film transistor platforms. Their versatile configurations and integration with functional materials make oxide TFT the focal point of sensing systems, including wearable and implantable electronics.

Original language	English
Article number	1700020
Journal	Advanced Materials Interfaces
Volume	4
Issue number	10
DOIs	https://doi.org/10.1002/admi.201700020
State	Published - May 23 2017

Keywords

biosensors
oxide semiconductors
photosensors
sensors
thin-film transistors

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10.1002/admi.201700020

Cite this

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title = "Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications",

abstract = "In the last decade, there has been considerable development in the area of oxide semiconductors, owing to their superior electrical properties as compared to a-Si:H, and lower cost and better uniformity over large areas as compared to poly-Si. On the other hand, multi-functional sensing systems play a significant role in building a bridge across bio/electronic interface and require advanced thin-film transistors (TFT) as sensing components and signal processing circuits. High-performance oxide TFTs are constructed based on material design, advanced processing and device architecture and provide higher sensitivity when compared with other active thin-film transistor platforms. Their versatile configurations and integration with functional materials make oxide TFT the focal point of sensing systems, including wearable and implantable electronics.",

keywords = "biosensors, oxide semiconductors, photosensors, sensors, thin-film transistors",

author = "Rim, \{You Seung\} and Huajun Chen and Bowen Zhu and Bae, \{Sang Hoon\} and Shuanglin Zhu and Li, \{Philip Jwo\} and Wang, \{Isaac Caleb\} and Yang Yang",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2017",

month = may,

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doi = "10.1002/admi.201700020",

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T1 - Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications

AU - Rim, You Seung

AU - Chen, Huajun

AU - Zhu, Bowen

AU - Bae, Sang Hoon

AU - Zhu, Shuanglin

AU - Li, Philip Jwo

AU - Wang, Isaac Caleb

AU - Yang, Yang

PY - 2017/5/23

Y1 - 2017/5/23

N2 - In the last decade, there has been considerable development in the area of oxide semiconductors, owing to their superior electrical properties as compared to a-Si:H, and lower cost and better uniformity over large areas as compared to poly-Si. On the other hand, multi-functional sensing systems play a significant role in building a bridge across bio/electronic interface and require advanced thin-film transistors (TFT) as sensing components and signal processing circuits. High-performance oxide TFTs are constructed based on material design, advanced processing and device architecture and provide higher sensitivity when compared with other active thin-film transistor platforms. Their versatile configurations and integration with functional materials make oxide TFT the focal point of sensing systems, including wearable and implantable electronics.

AB - In the last decade, there has been considerable development in the area of oxide semiconductors, owing to their superior electrical properties as compared to a-Si:H, and lower cost and better uniformity over large areas as compared to poly-Si. On the other hand, multi-functional sensing systems play a significant role in building a bridge across bio/electronic interface and require advanced thin-film transistors (TFT) as sensing components and signal processing circuits. High-performance oxide TFTs are constructed based on material design, advanced processing and device architecture and provide higher sensitivity when compared with other active thin-film transistor platforms. Their versatile configurations and integration with functional materials make oxide TFT the focal point of sensing systems, including wearable and implantable electronics.

KW - biosensors

KW - oxide semiconductors

KW - photosensors

KW - sensors

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/85019570345

U2 - 10.1002/admi.201700020

DO - 10.1002/admi.201700020

M3 - Review article

AN - SCOPUS:85019570345

SN - 2196-7350

VL - 4

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 10

M1 - 1700020

ER -

Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications

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