TY - JOUR
T1 - Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors
AU - Rim, You Seung
AU - Chen, Huajun
AU - Song, Tze Bin
AU - Bae, Sang Hoon
AU - Yang, Yang
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/8/25
Y1 - 2015/8/25
N2 - We investigated aqueous metal complex-based oxide semiconductor films formed with various ligands, such as chloride, acetate, fluoride, and nitrate. Nitrate ligand-based indium(III) precursor was easily decomposed at low temperature due to the replacement of all nitrate ions with water during solvation to form the hexaaqua indium(III) cation ([In(H2O)6]3+). Hexaaqua indium(III) cation was a key complex to realize high-quality oxide films at low temperature. Additionally, Al2O3-based high-k dielectric was also employed by using a nitrate precursor, and the hexaaqua aluminum(III) cation ([Al(H2O)6]3+) was confirmed. This complex-based Al2O3 film showed high breakdown voltage and stable capacitance under high frequency operation compared to organic solvent-based Al2O3 films. We successfully demonstrated aqueous-based In2O3 TFTs with Al2O3 high-k gate dielectrics formed at 250 °C with a wide gate voltage operation and high saturation mobility and on/off ratio of 36.31 ± 2.29 cm2 V-1 s-1 and over 107, respectively. (Graph Presented).
AB - We investigated aqueous metal complex-based oxide semiconductor films formed with various ligands, such as chloride, acetate, fluoride, and nitrate. Nitrate ligand-based indium(III) precursor was easily decomposed at low temperature due to the replacement of all nitrate ions with water during solvation to form the hexaaqua indium(III) cation ([In(H2O)6]3+). Hexaaqua indium(III) cation was a key complex to realize high-quality oxide films at low temperature. Additionally, Al2O3-based high-k dielectric was also employed by using a nitrate precursor, and the hexaaqua aluminum(III) cation ([Al(H2O)6]3+) was confirmed. This complex-based Al2O3 film showed high breakdown voltage and stable capacitance under high frequency operation compared to organic solvent-based Al2O3 films. We successfully demonstrated aqueous-based In2O3 TFTs with Al2O3 high-k gate dielectrics formed at 250 °C with a wide gate voltage operation and high saturation mobility and on/off ratio of 36.31 ± 2.29 cm2 V-1 s-1 and over 107, respectively. (Graph Presented).
UR - https://www.scopus.com/pages/publications/84940118480
U2 - 10.1021/acs.chemmater.5b02505
DO - 10.1021/acs.chemmater.5b02505
M3 - Article
AN - SCOPUS:84940118480
SN - 0897-4756
VL - 27
SP - 5808
EP - 5812
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 16
ER -