Geometric-disorder effects in lateral surface superlattices

A. E. Carlsson, N. W. Ashcroft

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effects of static geometric disorder on the electronic structure of a model two-dimensional semiconductor superlattice are studied with the use of a coherent-potential description of off-diagonal disorder. The parameters in the model are chosen to represent as accurately as possible an array of short GaAs cylinders in a host matrix of Ga1-xAlxAs. The disorder scattering effects are found to be most pronounced near the band edges for disorder in cylinder size, and near the band center for disorder in cylinder spacing. The calculated electron damping rate is similar in magnitude to that obtained in previous calculations for phonon scattering, which indicated the persistence of negative differential mobility.

Original languageEnglish
Pages (from-to)6791-6796
Number of pages6
JournalPhysical Review B
Volume29
Issue number12
DOIs
StatePublished - 1984

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