TY - JOUR
T1 - Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides
AU - Fei, Ruixiang
AU - Kang, Wei
AU - Yang, Li
N1 - Funding Information:
We acknowledge fruitful discussions with Wenshen Song, Vy Tran, and Shiyuan Gao. We are supported by the National Science Foundation (NSF) CAREER Grant No.DMR-1455346, NSF EFRI-2DARE-1542815, and the International Center for Advanced Renewable Energy & Sustainability (I-CARES). The computational resources have been provided by the Stampede of Teragrid at the Texas Advanced Computing Center (TACC) through XSEDE.
Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/8/23
Y1 - 2016/8/23
N2 - Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials.
AB - Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials.
UR - https://www.scopus.com/pages/publications/84988458222
U2 - 10.1103/PhysRevLett.117.097601
DO - 10.1103/PhysRevLett.117.097601
M3 - Article
AN - SCOPUS:84988458222
SN - 0031-9007
VL - 117
JO - Physical Review Letters
JF - Physical Review Letters
IS - 9
M1 - 097601
ER -