Electrostatic moiré potential from twisted hexagonal boron nitride layers

Dong Seob Kim, Roy C. Dominguez, Rigo Mayorga-Luna, Dingyi Ye, Jacob Embley, Tixuan Tan, Yue Ni, Zhida Liu, Mitchell Ford, Frank Y. Gao, Saba Arash, Kenji Watanabe, Takashi Taniguchi, Suenne Kim, Chih Kang Shih, Keji Lai, Wang Yao, Li Yang, Xiaoqin Li, Yoichi Miyahara

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Moiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalNature Materials
Volume23
Issue number1
DOIs
StatePublished - Jan 2024

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