Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs

  • B. T. Jonker
  • , A. T. Hanbicki
  • , G. Kioseoglou
  • , C. H. Li
  • , R. M. Stroud
  • , J. M. Sullivan
  • , S. C. Erwin
  • , G. Lüpke
  • , H. B. Zhao
  • , Y. H. Ren
  • , B. Sun
  • , G. Itskos
  • , R. Mallory
  • , M. Yasar
  • , A. Petrou

Research output: Contribution to journalConference articlepeer-review

Abstract

The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. The analysis showed that the addition of a ZnSe interlayer provides a smaller conduction band offset in CdCr2Se4/ZnSe/(AlGa)As heterostructure.

Original languageEnglish
Pages (from-to)CT07
JournalDigests of the Intermag Conference
StatePublished - Oct 1 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: Mar 28 2003Apr 3 2003

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