Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs

B. T. Jonker; A. T. Hanbicki; G. Kioseoglou; C. H. Li; R. M. Stroud; J. M. Sullivan; S. C. Erwin; G. Lüpke; H. B. Zhao; Y. H. Ren; B. Sun; G. Itskos; R. Mallory; M. Yasar; A. Petrou

doi:10.1109/INTMAG.2003.1230411

Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr₂Se₄/AlGaAs/GaAs

B. T. Jonker, A. T. Hanbicki, G. Kioseoglou, C. H. Li, R. M. Stroud, J. M. Sullivan, S. C. Erwin, G. Lüpke, H. B. Zhao, Y. H. Ren, B. Sun, G. Itskos, R. Mallory, M. Yasar, A. Petrou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr₂Se₄-AlGaAs-GaAs are studied. Epitaxially grown CdCr₂Se₄ films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.

Original language	English
Title of host publication	Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780376471, 9780780376472
DOIs	https://doi.org/10.1109/INTMAG.2003.1230411
State	Published - 2003
Event	2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States Duration: Mar 30 2003 → Apr 3 2003

Publication series

Name	Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

Conference

Conference	2003 IEEE International Magnetics Conference, Intermag 2003
Country/Territory	United States
City	Boston
Period	03/30/03 → 04/3/03

Keywords

Electroluminescence
Gallium arsenide
Light emitting diodes
Polarization
Spin polarized transport

Access to Document

10.1109/INTMAG.2003.1230411

Cite this

Jonker, B. T., Hanbicki, A. T., Kioseoglou, G., Li, C. H., Stroud, R. M., Sullivan, J. M., Erwin, S. C., Lüpke, G., Zhao, H. B., Ren, Y. H., Sun, B., Itskos, G., Mallory, R., Yasar, M., & Petrou, A. (2003). Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr₂Se₄/AlGaAs/GaAs. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference Article 1230411 (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2003.1230411

Jonker, B. T. ; Hanbicki, A. T. ; Kioseoglou, G. et al. / Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure : n-CdCr₂Se₄/AlGaAs/GaAs. Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2003. (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference).

@inproceedings{1a00720c84b640999d225122f69d549c,

title = "Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs",

abstract = "Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.",

keywords = "Electroluminescence, Gallium arsenide, Light emitting diodes, Polarization, Spin polarized transport",

author = "Jonker, {B. T.} and Hanbicki, {A. T.} and G. Kioseoglou and Li, {C. H.} and Stroud, {R. M.} and Sullivan, {J. M.} and Erwin, {S. C.} and G. L{\"u}pke and Zhao, {H. B.} and Ren, {Y. H.} and B. Sun and G. Itskos and R. Mallory and M. Yasar and A. Petrou",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Magnetics Conference, Intermag 2003 ; Conference date: 30-03-2003 Through 03-04-2003",

year = "2003",

doi = "10.1109/INTMAG.2003.1230411",

language = "English",

series = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",

}

Jonker, BT, Hanbicki, AT, Kioseoglou, G, Li, CH, Stroud, RM, Sullivan, JM, Erwin, SC, Lüpke, G, Zhao, HB, Ren, YH, Sun, B, Itskos, G, Mallory, R, Yasar, M & Petrou, A 2003, Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr₂Se₄/AlGaAs/GaAs. in Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference., 1230411, Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2003 IEEE International Magnetics Conference, Intermag 2003, Boston, United States, 03/30/03. https://doi.org/10.1109/INTMAG.2003.1230411

Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr₂Se₄/AlGaAs/GaAs. / Jonker, B. T.; Hanbicki, A. T.; Kioseoglou, G. et al.
Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc., 2003. 1230411 (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure

T2 - 2003 IEEE International Magnetics Conference, Intermag 2003

AU - Jonker, B. T.

AU - Hanbicki, A. T.

AU - Kioseoglou, G.

AU - Li, C. H.

AU - Stroud, R. M.

AU - Sullivan, J. M.

AU - Erwin, S. C.

AU - Lüpke, G.

AU - Zhao, H. B.

AU - Ren, Y. H.

AU - Sun, B.

AU - Itskos, G.

AU - Mallory, R.

AU - Yasar, M.

AU - Petrou, A.

PY - 2003

Y1 - 2003

N2 - Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.

AB - Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, an in- plane easy axis with a coercive field of 125 Oe. The cross section of the LED and the band alignment were shown.

KW - Electroluminescence

KW - Gallium arsenide

KW - Light emitting diodes

KW - Polarization

KW - Spin polarized transport

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M3 - Conference contribution

AN - SCOPUS:84949509121

T3 - Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

BT - Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 30 March 2003 through 3 April 2003

ER -

Jonker BT, Hanbicki AT, Kioseoglou G, Li CH, Stroud RM, Sullivan JM et al. Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr₂Se₄/AlGaAs/GaAs. In Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2003. 1230411. (Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2003.1230411