Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs

B. T. Jonker, A. T. Hanbicki, G. Kioseoglou, C. H. Li, R. M. Stroud, J. M. Sullivan, S. C. Erwin, G. Lüpke, H. B. Zhao, Y. H. Ren, B. Sun, G. Itskos, R. Mallory, M. Yasar, A. Petrou

Research output: Contribution to journalConference articlepeer-review

Abstract

The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. The analysis showed that the addition of a ZnSe interlayer provides a smaller conduction band offset in CdCr2Se4/ZnSe/(AlGa)As heterostructure.

Original languageEnglish
Pages (from-to)CT07
JournalDigests of the Intermag Conference
StatePublished - Oct 1 2003
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: Mar 28 2003Apr 3 2003

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