Abstract
ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O2 and N2. The presence of N2 during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N2 concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N2 concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.
| Original language | English |
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| Article number | 155407 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 42 |
| Issue number | 15 |
| DOIs | |
| State | Published - 2009 |