Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

Chuan Wang; Koungmin Ryu; Alexander Badmaev; Nishant Patil; Albert Lin; Subhasish Mitra; H. S.Philip Wong; Chongwu Zhou

doi:10.1063/1.2956677

Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

Chuan Wang
, Koungmin Ryu
, Alexander Badmaev
, Nishant Patil
, Albert Lin
, Subhasish Mitra
, H. S.Philip Wong
, Chongwu Zhou

Department of Electrical & Systems Engineering

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μAμm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p -type aligned nanotube devices into n -type. These devices were further utilized to demonstrate various logic circuits, including p -type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.

Original language	English
Article number	033101
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2956677
State	Published - 2008

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title = "Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes",

abstract = "In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μAμm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p -type aligned nanotube devices into n -type. These devices were further utilized to demonstrate various logic circuits, including p -type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.",

author = "Chuan Wang and Koungmin Ryu and Alexander Badmaev and Nishant Patil and Albert Lin and Subhasish Mitra and Wong, \{H. S.Philip\} and Chongwu Zhou",

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T1 - Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

AU - Wang, Chuan

AU - Ryu, Koungmin

AU - Badmaev, Alexander

AU - Patil, Nishant

AU - Lin, Albert

AU - Mitra, Subhasish

AU - Wong, H. S.Philip

AU - Zhou, Chongwu

PY - 2008

Y1 - 2008

N2 - In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μAμm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p -type aligned nanotube devices into n -type. These devices were further utilized to demonstrate various logic circuits, including p -type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.

AB - In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μAμm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p -type aligned nanotube devices into n -type. These devices were further utilized to demonstrate various logic circuits, including p -type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.

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DO - 10.1063/1.2956677

M3 - Article

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033101

ER -

Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

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