Defect states at floating and dangling bonds in amorphous Si

P. A. Fedders, A. E. Carlsson

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


Defect-state wave functions and energies are calculated for dangling bonds and recently proposed "floating bonds" in a-Si, using a Bethe-lattice terminated nine-atom cluster and a tight-binding approach. The dangling-bond state is much more localized than the floating-bond state, consistent with a rigorous result we prove for the wave-function amplitudes. Our results suggest that the D-state electron-spin-resonance signal in a-Si:H arises from dangling bonds.

Original languageEnglish
Pages (from-to)8506-8508
Number of pages3
JournalPhysical Review B
Issue number14
StatePublished - 1988


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