Characterization of a Binary Output Resistance-to-Voltage Read Circuit for Sensing Magnetic Tunnel Junctions

The majority of circuits used to sense magnetic tunnel junction devices are clocked (i.e., a clock signal triggers a read operation). However, there are applications in which a continuous read is the desired functionality. We characterize a binary output resistance-to-voltage read circuit designed to continuously sense the state of a magnetic tunnel junction device. It uses a current conveyor architecture, thereby keeping the voltage across the device stable. This allows for greater resilience to load capacitance (e.g., in the device connections). Empirical results measured from a test chip fabricated in a 3M2P 0.5- μm process are presented, including the demonstration of functional correctness, static properties, and dynamic properties.