Calibration and characterization of self-powered floating-gate usage monitor with single electron per second operational limit

Chenling Huang, Nizar Lajnef, Shantanu Chakrabartty

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Self-powered monitoring refers to a signal processing technique where the computational power is harvested directly from the signal being monitored. In this paper, we present the design and calibration of a CMOS event counter for long-term, self-powered mechanical usage monitoring. The counter exploits a log-linear response of the hot-electron injection process on a floating-gate transistor when biased in weak-inversion. By configuring an array of floating-gate injectors to respond to different amplitude levels of the input signal, a complete analog processor has been designed that implements a level counting algorithm, which is widely used in mechanical usage monitoring. Measured results from a fabricated prototype in a 0.5-μm CMOS process demonstrate that the processor can sense, store and compute over 105 usage cycles with an injection limit approaching one single electron per second and with a counting resolution of 5 bits. This paper also presents a calibration algorithm that is used for compensating the variations which arise due to device mismatch, power supply and temperature fluctuations. The maximum current rating of the fabricated analog processor has been measured to be less than 160 nA making it ideal for practical self-powered sensing applications.

Original languageEnglish
Article number5071181
Pages (from-to)556-568
Number of pages13
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume57
Issue number3
DOIs
StatePublished - 2010

Keywords

  • Event monitoring
  • Floating-gate transistors
  • Impact-ionized hot-electron injection
  • Level-crossing algorithms
  • Self-powering
  • Structural health monitoring
  • Subthreshold analog circuits
  • Ultralow power sensors

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