Abstract
Black phosphorus (BP) Schottky diodes with asymmetric metal contacts are demonstrated using gold and aluminum electrodes. The devices exhibit rectifying characteristics with current rectification ratio up to 1.5 × 103. The effect of channel length on the electrical characteristics of the BP Schottky diodes is also studied and the results reveal that the device loses its rectifying behavior (rectification ratio = 1.37) at ultrashort channel length of around 30 nm. The transition from rectifying to nonrectifying characteristics at extremely small channel length is attributed to the electric-field-induced barrier thinning, which results in significantly increased tunneling current under reverse bias. Using the BP Schottky diodes with relatively long channel length (≈1 μm), photodetectors with fast response time of less than 2 ms are demonstrated. This work demonstrates the potential of using BP-based diode devices for optoelectronic applications.
| Original language | English |
|---|---|
| Article number | 1500346 |
| Journal | Advanced Electronic Materials |
| Volume | 2 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2016 |
Keywords
- black phosphorus
- metal work functions
- photoresponsive materials
- schottky diodes
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