Abstract
A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 °C by choosing NaNH2 and In2S3 as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.
Original language | English |
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Pages (from-to) | 107-111 |
Number of pages | 5 |
Journal | Inorganic Chemistry |
Volume | 42 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2003 |