Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature

Jianping Xiao; Yi Xie; Rui Tang; Wei Luo

doi:10.1021/ic0258330

Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature

Jianping Xiao, Yi Xie, Rui Tang, Wei Luo

Research output: Contribution to journal › Article

63 Scopus citations

Abstract

A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 °C by choosing NaNH₂ and In₂S₃ as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.

Original language	English
Pages (from-to)	107-111
Number of pages	5
Journal	Inorganic Chemistry
Volume	42
Issue number	1
DOIs	https://doi.org/10.1021/ic0258330
State	Published - Jan 1 2003
Externally published	Yes

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Xiao, J., Xie, Y., Tang, R., & Luo, W. (2003). Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature. Inorganic Chemistry, 42(1), 107-111. https://doi.org/10.1021/ic0258330

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abstract = "A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 °C by choosing NaNH2 and In2S3 as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.",

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AB - A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 °C by choosing NaNH2 and In2S3 as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.

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