Band offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe interfaces

H. B. Zhao; Y. H. Ren; B. Sun; G. Lüpke; A. T. Hanbicki; B. T. Jonker

doi:10.1063/1.1558956

Band offsets at CdCr₂Se₄-(AlGa)As and CdCr₂Se₄-ZnSe interfaces

H. B. Zhao, Y. H. Ren, B. Sun, G. Lüpke, A. T. Hanbicki, B. T. Jonker

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Abstract

A study was performed on band offsets at CdCr₂Se₄-(AlGa)As and CdCr₂Se₄-ZnSe heterojunctions. The band discontinuities of these heterojunctions were measured to high resolution by internal photoemission. The conduction band offsets were determined from the threshold energies of the photocurrent spectrum at room temperature.

Original language	English
Pages (from-to)	1422-1424
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1558956
State	Published - Mar 3 2003

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title = "Band offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe interfaces",

abstract = "A study was performed on band offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe heterojunctions. The band discontinuities of these heterojunctions were measured to high resolution by internal photoemission. The conduction band offsets were determined from the threshold energies of the photocurrent spectrum at room temperature.",

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AU - Ren, Y. H.

AU - Sun, B.

AU - Lüpke, G.

AU - Hanbicki, A. T.

AU - Jonker, B. T.

PY - 2003/3/3

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AB - A study was performed on band offsets at CdCr2Se4-(AlGa)As and CdCr2Se4-ZnSe heterojunctions. The band discontinuities of these heterojunctions were measured to high resolution by internal photoemission. The conduction band offsets were determined from the threshold energies of the photocurrent spectrum at room temperature.

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EP - 1424

JO - Applied Physics Letters

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Band offsets at CdCr₂Se₄-(AlGa)As and CdCr₂Se₄-ZnSe interfaces

Abstract

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