Abstract
We investigated solution-processed oxide semiconductor films derived from various aqueous precursors. Findings show that the structure of metal complexes in the precursor solutions greatly affect decomposition temperature, impurity concentration, and more importantly, electrical performance. Also, facile redox reaction is demonstrated as one solution to remove impurities effectively.
| Original language | English |
|---|---|
| Pages (from-to) | 1140-1142 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2016 |
| Event | 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States Duration: May 22 2016 → May 27 2016 |
Keywords
- Impurity control
- Low-temperature growth
- Oxide semiconductor
- Solution process
- Thin-film transistor (TFT)