AFM and SNOM characterization of carboxylic acid terminated silicon and silicon nitride surfaces

A. Cricenti, G. Longo, M. Luce, R. Generosi, P. Perfetti, D. Vobornik, G. Margaritondo, P. Thielen, J. S. Sanghera, I. D. Aggarwal, J. K. Miller, N. H. Tolk, D. W. Piston, F. Cattaruzza, A. Flamini, T. Prosperi, A. Mezzi

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Abstract

Silicon and silicon nitride surfaces have been successfully terminated with carboxylic acid monolayers and investigated by atomic force microscopy (AFM) and scanning near-field optical microscopy (SNOM). On clean Si surface, AFM showed topographical variations of 0.3-0.4 nm while for the clean Si 3N4 surface the corrugation was around 3-4 nm. After material deposition, the corrugation increased in both samples with a value in topography of 1-2 nm for Si and 5-6 nm for Si3N4. The space distribution of specific chemical species was obtained by taking SNOM reflectivity at several infrared wavelengths corresponding to stretch absorption bands of the material. The SNOM images showed a constant contribution in the local reflectance, suggesting that the two surfaces were uniformly covered.

Original languageEnglish
Pages (from-to)51-57
Number of pages7
JournalSurface Science
Volume544
Issue number1
DOIs
StatePublished - Oct 10 2003
Externally publishedYes

Keywords

  • Atomic force microscopy
  • Carboxylic acid
  • Silicon
  • Silicon nitride

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    Cricenti, A., Longo, G., Luce, M., Generosi, R., Perfetti, P., Vobornik, D., Margaritondo, G., Thielen, P., Sanghera, J. S., Aggarwal, I. D., Miller, J. K., Tolk, N. H., Piston, D. W., Cattaruzza, F., Flamini, A., Prosperi, T., & Mezzi, A. (2003). AFM and SNOM characterization of carboxylic acid terminated silicon and silicon nitride surfaces. Surface Science, 544(1), 51-57. https://doi.org/10.1016/S0039-6028(03)00999-3