A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

Shi Jun Liang; Wei Hu; A. Di Bartolomeo; Shaffique Adam; Lay Kee Ang

doi:10.1109/IEDM.2016.7838416

A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

Shi Jun Liang
, Wei Hu
, A. Di Bartolomeo
, Shaffique Adam
, Lay Kee Ang

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

Original language	English
Article number	7838416
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-January
DOIs	https://doi.org/10.1109/IEDM.2016.7838416
State	Published - 2016
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: Dec 3 2016 → Dec 7 2016

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title = "A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study",

abstract = "In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.",

author = "Liang, \{Shi Jun\} and Wei Hu and \{Di Bartolomeo\}, A. and Shaffique Adam and Ang, \{Lay Kee\}",

year = "2016",

doi = "10.1109/IEDM.2016.7838416",

language = "English",

volume = "2016-January",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

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T1 - A modified Schottky model for graphene-semiconductor (3D/2D) contact

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

AU - Liang, Shi Jun

AU - Hu, Wei

AU - Di Bartolomeo, A.

AU - Adam, Shaffique

AU - Ang, Lay Kee

PY - 2016

Y1 - 2016

N2 - In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

AB - In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

UR - https://www.scopus.com/pages/publications/85015850704

U2 - 10.1109/IEDM.2016.7838416

DO - 10.1109/IEDM.2016.7838416

M3 - Conference article

AN - SCOPUS:85015850704

SN - 0163-1918

VL - 2016-January

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 7838416

Y2 - 3 December 2016 through 7 December 2016

ER -

A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

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