@inproceedings{82fb58e940a54fca91845f856a5d7228,
title = "A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study",
abstract = "In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.",
author = "Liang, \{Shi Jun\} and Wei Hu and \{Di Bartolomeo\}, A. and Shaffique Adam and Ang, \{Lay Kee\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838416",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "14.4.1--14.4.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
}