TY - GEN
T1 - A 13μW 87dB dynamic range implantable ΔΣ modulator for full-spectrum neural recording
AU - Xu, Jian
AU - Islam, Md Kafiul
AU - Wang, Shuo
AU - Yang, Zhi
PY - 2013
Y1 - 2013
N2 - Experiment analysis on in-vivo data sequences suggests a wide system dynamic range (DR) is required to simultaneously record local field potentials (LFPs), extra-cellular spikes, and artifacts/interferences. In this paper, we present a 13 μW 87 dB DR ΔΣ modulator for full-spectrum neural recording. To achieve a wide DR and low power consumption, a fully-differential topology is used with multi-bit (MB) quantization scheme and switched-opamp (SO) technique. By adopting a novel fully-clocked scheme, a power-efficient current-mirror SO is developed with 50% power saving, which doubles the figure-of-merit (FOM) over its counterpart. A new static power-less multi-bit quantizer with 96% power and 69% area reduction is also introduced. Besides, instead of metal-insulator-metal (MIM) capacitor, three high-density MOS capacitor (MOSCAP) structures are employed to reduce circuit area. Measurement results show a peak signal-to-noise and distortion ratio (SNDR) of 85 dB with 10 kHz bandwidth at 1.0 V supply, corresponding to an FOM of 45 fJ/conv.-step. which is implemented in a 0.18 μm CMOS
AB - Experiment analysis on in-vivo data sequences suggests a wide system dynamic range (DR) is required to simultaneously record local field potentials (LFPs), extra-cellular spikes, and artifacts/interferences. In this paper, we present a 13 μW 87 dB DR ΔΣ modulator for full-spectrum neural recording. To achieve a wide DR and low power consumption, a fully-differential topology is used with multi-bit (MB) quantization scheme and switched-opamp (SO) technique. By adopting a novel fully-clocked scheme, a power-efficient current-mirror SO is developed with 50% power saving, which doubles the figure-of-merit (FOM) over its counterpart. A new static power-less multi-bit quantizer with 96% power and 69% area reduction is also introduced. Besides, instead of metal-insulator-metal (MIM) capacitor, three high-density MOS capacitor (MOSCAP) structures are employed to reduce circuit area. Measurement results show a peak signal-to-noise and distortion ratio (SNDR) of 85 dB with 10 kHz bandwidth at 1.0 V supply, corresponding to an FOM of 45 fJ/conv.-step. which is implemented in a 0.18 μm CMOS
KW - full-spectrum recording
KW - low voltage low power design
KW - wide system dynamic range
KW - ΔΣmodulator
UR - http://www.scopus.com/inward/record.url?scp=84886515991&partnerID=8YFLogxK
U2 - 10.1109/EMBC.2013.6610113
DO - 10.1109/EMBC.2013.6610113
M3 - Conference contribution
C2 - 24110300
AN - SCOPUS:84886515991
SN - 9781457702167
T3 - Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS
SP - 2764
EP - 2767
BT - 2013 35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013
Y2 - 3 July 2013 through 7 July 2013
ER -